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Fairchild Semiconductor N-Channel PowerTrench® MOSFETs

Fairchild Semiconductor N-Channel
PowerTrench® MOSFETs

Fairchild Semiconductor N-Channel PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Fairchild Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.

The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.

Part Numbers Datasheet RDS(on) Test Conditions for RDS(on) Max VDSS Max ID @ TC = 25⁰C
FDB016N04AL7
1.6mΩ VGS = 10V, ID = 80A 40V 306A
FDD10N20LZTM 0.36Ω VGS = 10V, ID = 3.8A 200V 7.6A
FDD7N25LZTM 0.55Ω VGS = 10V, ID = 3.1A 250V 6.2A
FDD850N10L 75mΩ VGS = 10V, ID = 12A 100V 15.7A
FDD86102LZ 22.5mΩ VGS = 10V, ID = 8A 100V 35A
FDD86250 22mΩ VGS = 10V, ID = 8A 150V 51A
FDMC6296 10.5mΩ VGS = 10V, ID = 11.5A 30V 11.5A
FDMC86102L 23mΩ VGS = 10V, ID = 7A 100V 30A
FDMC86106LZ 103mΩ VGS = 10V, ID = 3.3A 100V 9.6A
FDMC8622 56mΩ VGS = 10V, ID = 4A 100V 16A
FDMC86244 134mΩ VGS = 10V, ID = 2.8A 150V 9.4A
FDMS86103L 8mΩ VGS = 10V, ID = 12A 100V 81A
FDN86246 261mΩ VGS = 10V, ID = 1.6A 150V 1.6A
FDS89141 62mΩ VGS = 10V, ID = 3.5A 100V 3.5V
FDT86102LZ 28mΩ VGS = 10V, ID = 6.6A 100V 6.6V
FDT86106LZ 108mΩ VGS = 10V, ID = 3.2A 100V 3.2V
FDT86246 236mΩ VGS = 10V, ID = 2A 150V 2A
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