Central Semiconductor
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Central Semiconductor Corp. manufactures world-class discrete semiconductors in surface mount and leaded packages. Device families include small signal transistors, switching diodes, bipolar power transistors, zener diodes, schottky diodes, and current limiting diodes.
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Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process.
Central Semiconductor CTLT7410-M621 Complementary Low VCE(SAT) PNP Transistor
Central Semiconductor CTLT7410-M621 Complementary Low VCE(SAT) PNP Transistor is designed for applications where small size, operational efficiency, and low energy consumption are prime requirements. It is available in a very small 1x2mm, leadless surface mount package, making it capable of dissipating up to three times the power of similar devices in comparable-sized surface mount packages. Central Semiconductor CTLT7410-M621 Complementary Low VCE(SAT) PNP Transistor features a high operational efficiency, high power-to-footprint ratio, and a high collector current. It is ideal for applications including DC-DC converters, switching circuits, LCD backlighting, and battery-powered portable equipment.
Central Semiconductor CFD4448 High Speed Switching Diode
Central Semiconductor CFD4448 High Speed Switching Diode features an extremely fast switching speed of 4ns max and a continuous forward voltage of 250mA. It is available in a very small, low profile leadless SOD-882L package. The CFD4448 is an ultra high speed switching diode ideal for applications where very small size and operational efficiency are prime requirements. Central Semiconductor CFD4448 High Speed Switching Diode is surface mountable and is useful in battery-powered applications such as cell phones, digital cameras, pagers, PDAs, laptop computers, and more.
Central Semiconductor CTLSH01 Series Silicon Schottky Diode
Central Semiconductor's CTLSH01 Series Silicon Schottky Diodes are high performing 30V, 100mA schottky diodes designed for applications where ultra small size, low forward voltage and low reverse leakage losses are optimal requirements. The package for these Central Semiconductor CTLSH01 Series Silicon Schottky Diodes has a dimension of 0.65mm x 0.35mm and a low profile of 0.32mm making these ideal for space constrained designs requiring superior energy efficiency and performance characteristics optimized for logic level applications. Typical applications include DC-DC converters, voltage clamping, protection circuits, and battery powered applications including cell phones, digital cameras, pagers, PDAs and laptop computers.
Central Semiconductor CSHD6-100C Dual High Voltage Schottky Rectifier
Central Semiconductor's CSHD6-100C Dual High Voltage Schottky Rectifier is designed for surface mount high voltage applications requiring a low forward voltage drop. The CSHD6-100C is rated at 6.0 Amps (average rectified forward current) and 100 Volts (peak repetitive reverse voltage) and comes in a small surface mount (DPAK) package. This Central Semiconductor CSHD6-100C device consists of two 3.0 Amp schottky rectifiers in a common cathode configuration.
Central Semiconductor CMXD3003TO Low Leakage Switching Diode
The Central Semiconductor CMXD3003TO Low Leakage Switching Diode consists of three isolated low leakage silicon switching diodes arranged in an alternating configuration in a SUPERmini™ SOT-26 surface mount package, and is designed for low leakage switching applications. Central Semiconductor's CMXD3003TO can be configured as a 540V switching diode. Applications for the CMXD3003TO Low Leakage Switching Diode include voltage multiplier, steering diode array and general purpose switching.
Central Semiconductor CMSH1 Series 1.0 Amp Schottky Rectifiers
The Central Semiconductor CMSH1 Series 1.0 Amp Surface Mount Silicon Schottky Rectifier that features high reliability, high efficiency, a 40V to 200V range, low leakage current, low forward voltage and "C" bend construction which provides strain relief when mounted on a PC board. Central Semiconductor's CMSH1 Series 1.0 Amp Schottky Rectifiers are designed for use in all types of commercial, industrial, entertainment, computer, and automotive applications.
Central Semiconductor CMLM0575 Multi Discrete™ Module
The Central Semiconductor CMLM0575 is a Multi Discrete Module™ consisting of a single N-Channel enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 surface mount package. The CMLM0575 Multi Discrete Module™ features high current MOSFET (ID=650mA), ESD protection up to 2kV, low RDS(on) (275mΩ Max at VGS=2.5V) and a low for voltage schottky diode (0.47V at 0.5A). This Central Semiconductor CMLM0575 Multi Discrete Module™ is designed for small signal general purpose applications where size and operational efficiency are prime requirements. The typical applications for the CMLM0575 Multi Discrete Module™ are DC-DC converters, boost converters, motor drive controls and battery powered portable equipment.
Central Semiconductor High Current Enhancement-Mode MOSFETs
Central Semiconductor's High Current Enhancement-Mode MOSFETs, manufactured in the DMOS process, are designed for high speed pulsed amplifier and driver applications. Central Semiconductors MOSFETs offer high current, low RDS(ON), low threshold voltage and low leakage current. These High Current Enhancement-Mode MOSFETs are great for use in load/power switches, power supply converter circuits and battery power portable equipment.
Central Semiconductor CMBT3904E NPN Surface Mount Transistors
Central Semiconductor CMBT3904E NPN surface mount transistors with enhanced specifications are ideal for applications in which ultra-small size and power dissipation are primary requirements. Central Semiconductor CMBT3904E SMD transistors are packaged in a very small (0.8 x 0.6 x 0.4mm) FEMTOmini™ SOT-923 package and provide a 200mA collector current and low VCE(SAT) of 0.1V typical at 50mA. The CMBT3904E is designed for use in a variety of applications, including DC/DC converters, voltage clamping, protection circuits, and battery powered devices.
Central Semiconductor CMPDM302PH Small Signal SMD MOSFET
Central Semiconductor CMPDM302PH Small Signal SMD MOSFET is a high current P-Channel enhancement-mode silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. The Central Semiconductor CMPDM302PH Small Signal SMD MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.
Central Semiconductor CMLDM7484 Small Signal N and P-Channel MOSFET
Central Semiconductor CMLDM7484 Small Signal N and P-Channel MOSFET consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The Central Semiconductor CMLDM7484 Small Signal N and P-Channel MOSFET features the small, SOT-563 surface mount package.
Central Semiconductor CMLM8205 Small Signal P-Channel MOSFET Schottky Diode
Central Semiconductor CMLM8205 Small Signal P-Channel MOSFET Schottky Diode is a Multi Discrete Module™ consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 surface mount case. Central Semiconductor CMLM8205 Small Signal P-Channel MOSFET Schottky Diode is designed for small signal general purpose applications where size and operational efficiency are prime requirements.
Central Semiconductor CSHD10-100C 10A, 100V Schottky Rectifiers
Central Semiconductor CSHD10-100C 10A, 100V Schottky rectifiers are designed for surface mount high-voltage applications requiring a low forward voltage drop. Central Semiconductor CSHD10-100C Schottky rectifiers consist of two 5A Schottky rectifiers in a common cathode configuration. These Central Semiconductor rectifiers feature low forward voltage (VF) of 0.8V at 5A. The energy-efficient CSHD10-100C provides elevated temperature performance and single, dual, or parallel configurations.
Central Semiconductor CMRDM3575 Small Signal N and P-Channel MOSFET
Central Semiconductor CMRDM3575 Small Signal N and P-Channel MOSFET consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer low rDS(ON) and low threshold voltage. Central Semiconductor CMRDM3575 Small Signal N and P-Channel MOSFET features a low package profile of 0.5mm in a small SOT-963 surface mount package.
Central Semiconductor CBRHDSH2-100 Schottky Bridge Rectifier
The Central Semiconductor CBRHDSH2-100 2A, 100V Schottky bridge rectifier is an energy efficient device with a low reverse leakage current of 0.7µA that addresses the need for a space saving 2A, 100V full wave bridge rectifier for power management, solid state lighting, and power over Ethernet applications. The Central Semiconductor CBRHDSH2-100 provides a 50% reduction in utilized board space compared to four individual Schottky rectifiers in the SMA package. Coupled with a low profile of less than 2.7mm, the Central Semiconductor CBRHDSH2-100 provides the ideal solution for the increasing number of applications with limited space requirements.