Hittite / Analog Devices HMC1049LP5E
A GaAs MMIC LNA that operates between 0.3 and 20GHz. This LNA provides 15dB of small signal gain, 1.8dB noise figure and output IP3 of 29dBm, while requiring only 70mA from a +7V supply. The P1dB output power of 14.5dBm enables the LNA to function as an LO driver.
Cree GaN HEMTs
High Electron Mobility Transistors
Cree GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
NXP High-Performance RF
With NXP RF products, you can design systems to the highest specifications, while retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency and integration levels. A clear industry leader in high-performance RF, NXP annually ships more than 4 billion products.
TriQuint Semiconductor TGA2237 & TGA2237-SM
Wideband Distributed Amplifiers
These Wideband Distributed Amplifiers are fabricated on TriQuint's production 0.25μm GaN on SiC process. The TGA2237 series operates from 0.03 to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50% power-added efficiency.
MACOM Technology Solutions
MAGX-000035-0150x GaN HEMT Pulsed Power Transistors
Gold metalized Gallium Nitride (GaN) on Silicon Carbide RF Power transistors are suitable for a variety of RF power amplifier applications. These devices use a state-of-the-art wafer fabrication process to offer high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for demanding application needs.
ROHM SiC Schottky Barrier Diodes
Having a total capacitive charge (Qc) that is small reduces switching loss and enables high-speed switching operations. In addition, unlike silicon based fast recovery diodes, SiC devices maintain constant characteristics, resulting in better performance.