Toshiba America Electronic Components, Inc. (TAEC) is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.
Toshiba TLP18x Photocoupler GaAs Ired & Photo-Transistors are small outline couplers, suitable for surface mount assembly. They each consist of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode. The TLP184 is also connected inverse parallel and can operate directly by AC input current. Toshiba TLP18x Photocoupler GaAs Ired & Photo-Transistors are smaller than a DIP package, making them suitable for high-density surface mounting applications such as programmable controllers.
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Toshiba's TLP2309 1Mbps Photocoupler consists of a high-output GaAℓAs light-emitting diode coupled with a high-speed photodiode-transistor chip. It is housed in the SO6 package. The TLP2309 guarantees operation at up to 110ºC and on power supplies of both 3.3V and 5V. Also, since the TLP2309 guarantees a creepage / clearance distance ≥ 5mm and internal isolation thickness ≥ 0.4mm, this product is in the reinforced insulation class according to international safety standards.
Toshiba's High-Speed Low Power Photocouplers consist of a high-output GaAℓAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. Each device guarantees operation at up to 125ºC and wide range operation of power-supply voltage (2.7V to 5.5 V). The TLP2362 is housed in the SO6 package and the TLP2168/TLP2468 are in the SO8 package. An internal noise shield provides superior common-mode rejection of 15kV/μs to 25kV/μs for improved noise immunity.
Toshiba's TCR3DM Series CMOS LDO Voltage Regulators are general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0V and 4.5V and capable of driving up to 300mA. They feature over-current protection, over-temperature protection, Inrush current protection circuit and Auto-discharge function. The TCR3DM series are offered in the ultra small plastic mold package DFN4 (1.0mm x 1.0mm; t 0.58mm). It has a low dropout voltage of 210mV (2.5V output, IOUT = 300mA) with low output noise voltage of 38μVrms (2.5V output) and a load transient response of only ⊿VOUT = ±80 mV ( IOUT = 1 mA⇔300mA, COUT =1.0μF). As small ceramic input and output capacitors can be used with the TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones.
Toshiba's TLP152/352 IGBT/MOSFET Gate Drive Photocouplers consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. Each of these have an internal Faraday shield that provides a guaranteed Common-mode transient immunity of 20kV/μs. They have a totem-pole output that can both sink and source current. These devices are ideal for IGBT and power MOSFET gate drive.
Toshiba's TLP5702 GaAlAs Photocoupler is a photocoupler that comes in a 6-pin SO6L package that consists of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photo detector IC. It provides guaranteed performance and specifications at temperatures of up to 110ºC. The TLP5702 is physically smaller and thinner than a photocoupler in an 8-pin DIP package and it is compliant with international safety standards for reinforced insulation. It provides a smaller footprint solution for applications that require a safety standard certification. An internal noise shield provides a guaranteed common-mode transient immunity of 20kV/μs. The TLP5702 is ideal for use as a small to medium class IGBT and power MOSFET gate driver.
Toshiba TC75S59F/TC75S59FU/TC75S59FE is a CMOS general-purpose single
comparator. The device can operate off a single power supply and draws a
lower supply current than a conventional bipolar general-purpose
comparator. This device's open-drain output stage can be wire-ORed with
those of other open-drain output circuits.
Toshiba TC75S57F/TC75S57FU/TC75S57FE is a CMOS general-purpose single comparator. The device can operate off a single power supply and draws a lower supply current than a conventional bipolar general-purpose comparator. This device's push-pull output stage can be directly connected to TTL or CMOS logic ICs, among others.
Toshiba TC32306FTG Single-Chip RF Transceiver for Low-Power Systems offers
the many functions required in UHF-band transceiver applications. Built on Toshiba's 0.13µm RFCMOS process, TC32306FTG integrates LNA, Mixer, IF Filter, IF AMP, RSSI, Signal Detector, Bit Rate Filter, Data Comparator, PLL, VCO and PA into a single IC that supports ASK/FSK modulation with a current consumption of TX 12mA at +10dBm output level / RX 9.7mA / Battery Saving 0μA (typ). The device's digital processing can significantly reduce the number of external components and allow fine adjustments. TC32306FTG is ideally suited for a variety of remote keyless entry (RKE)
and automotive equipment applications including answerback functions which detect and transmit
vehicle status information.
Toshiba TC35661SBG Bluetooth® Single-Chip Controllers
integrated RFCMOS Bluetooth devices designed to support Bluetooth
Classic (3.0+EDR) and the BT LE (low energy) 4.0 standard. TC35661SBG
complies with the standard Bluetooth HCI interface and offers
integration of stack and selected BT profiles on-chip. Using the WIFI
coexistence interface, TC35661SBG supports the BT3.0-HS function.
Bluetooth Qualification Body (BQB) qualified, TC35661SBG provide an easy
way to integrate Bluetooth for various industrial,
medical, and automotive applications.
Toshiba SSM6J771G ultra-compact MOSFETs deliver P-channel MOSFETs with high gate to source breakdown voltage, high drain to source breakdown voltage and a low drain to source on resistance. The WCSP-6C package is a 6 pin ball-grid style that offers a compact solution for designs with tight board space requirements.
Toshiba TCK10xG Load Switch ICs feature low-voltage operation, low on-resistance, low current consumption and a control input pin. They features a wide operating voltage range of 1.1 to 5.5 V and low on-resistance of 55 mΩ typical (VIN = 3.3 V, 500 mA). Additionally, all the load switches of the TCK10xG Series have inrush current reduction and thermal shutdown circuits. An auto discharge function and an overcurrent protection circuit are available on some load switches. Those without overcurrent protection provides an output current of 1 A, while those with overcurrent protection are offered with output currents of 0.2 A, 0.5 A and 0.8 A. The TCK10xG Series is available in ultra-small WCSP6B with a lead pitch of 0.4 mm (measuring 0.8 mm × 1.2 mm × 0.64 mm (max)) and WCSP4 (measuring 0.79 mm × 0.79 mm × 0.54 mm (max)), making it ideal for applications that require high-density assembly such as portable devices.
Toshiba SiC Schottky Barrier Diode are fabricated using silicon carbide (SiC), a wide-bandgap semiconductor, to provide high breakdown voltage that has never been possible with silicon (Si) SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behavior, making them the ideal replacements for Si fast-recovery diodes (FRDs) to improve power supply efficiency.
Toshiba DF6D7M1N and DF10G7M1N ESD Protection Diodes feature an electrostatic discharge rating of ±8kV, a junction temperature of 150ºC, and a storage temperature range of -55 to 150ºC. DF6D7M1N is designed for general ESD protection while DF10G7M1N is ideal for ESD protection in a range of applications, including: USB 2.0, USB 3.0, HDMI, SATA/eSATA, DisplayPort Interface, Digital Visual Interface, MDDI, and PCI Express.
Toshiba TC94B06WBG and TC94B15WBG are stereo headphone amplifiers with electronic volume control. TC94B06WBG is a Class-G device with a built in a charge pump circuit so an output coupling capacitor is not required. TC94B15WBG is a Class-G device that includes a two-channel audio digital-to-analog converter. These Toshiba devices are ideal for use in mobile phones and other portable devices.
Toshiba TPN4R203NC U-MOS VIII MOSFET is an N-channel device in a small, thin package. This Toshiba MOSFET features low drain source on-resistance of 3.5mΩ (typ.) at 10V and low leakage current of 10µA (max) at 30V. TPN4R203NC is ideal for use in Li-ion secondary batteries and power management switches.
Toshiba TCR2EE / TCR2EN CMOS Low Drop-Out Regulators are CMOS general-purpose single-output voltage regulators with an on/off control input and featuring low dropout voltage, low quiescent bias current, and fast load transient response. TCR2EN voltage regulators are available in fixed output voltages between 1.0V and 5.0V (TCR2EE) or 3.6V (TCR2EN) and are capable of driving up to 200mA. The devices feature overcurrent protection and an Auto-discharge function. These Toshiba devices are ideal for portable applications that require high-density board assembly, such as cellular phones.
Toshiba's U-MOS VI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. Offered in single, dual, n-channel, p-channel and various voltage versions, they offer a wide variety of options for the design engineer. Each address the need to support high-current charging with low voltage and low RDS(on) requirements. These compact packages and and low voltage operation make them ideal solutions for high-density packaging requirements in smart phones and game consoles.
Toshiba's U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, etc., as well as DC-DC power supplies for communication equipment, servers and data centers. Fabricated with the latest Gen-8 trench MOS process, these will help improve the efficiency of power supplies. Features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness.
Toshiba's Gen-4 Super-Juction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
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