Developed using MDmesh™ M2 EP technology with a strip layout and improved vertical structure.
P-channel Power MOSFETs using STripFET™ H6/F6 technology, with new trench gate structure.
Unsurpassed on-resistance per unit area and switching performance almost independent of temperature.
New generation power MOSFETs created using new MDmesh™ technology: MDmesh II Plus™ low Qg.
AEC-Q101-qualified STripFET™ VII DeepGATE™ Power MOSFETs w/ultra-low on-state resistance.