Ideal for automated placement with a low profile package and low forward voltage drop.
Second generation of trench MOS Schottky rectifiers from Vishay with low forward voltage drop.
Low forward voltage drop, low power losses, high forward surge capability, and ESD capability
Low forward voltage drop, low power losses, with a very low profile(typical height of 1.7 mm)
Offers diminished minority carrier injections to the
drift region, thus minimizing stored charges and improving switching