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MOSFET 40V 1.7mOhm@10V 60A N-Ch MV T-FET
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Manufacturer: Vishay
Product Category: MOSFET
RoHS: RoHS Compliant By Exemption Details
Id - Continuous Drain Current: 60 A
Vds - Drain-Source Breakdown Voltage: 40 V
Rds On - Drain-Source Resistance: 1.7 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V to 2.3 V
Qg - Gate Charge: 34.6 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 104 W
Mounting Style: SMD/SMT
Package / Case: SO-8
Packaging: Reel
Brand: Vishay / Siliconix
Configuration: Single Quad Drain Triple Source
Fall Time: 10 ns
Forward Transconductance - Min: 110 S
Minimum Operating Temperature: - 55 C
Rise Time: 11 ns
Series: SIRxxxDP
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 50 nS
Typical Turn-On Delay Time: 19 nS
VendorNumber: 6135
Part # Aliases: SIR640DP-GE3
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