Uses a double data rate architecture to achieve high-speed operation.
High speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
Designed to comply with DDR2 DRAM key features such as posted CAS# with additive latency, Write latency = Read latency -1 and On Die Termination.
Well suited for applications requiring high memory bandwidth and high performance.
High-speed CMOS synchronous DRAM w/ 64, 128, or 256 Mbits, as 4 Banks of 1M, 2M, or 4M word x 16 DRAM.