A 10W, 50Ω input matched discrete GaN on SiC HEMT operating from 30MHz to 3GHz.
100W Peak Power, 20W Average Power, 32V, DC - 3.5GHz, GaN RF Power Transistors.
GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness.
Discrete 1200-Micron GaAs pHEMT which operates from DC to 20 GHz
Discrete 800-Micron pHEMT which operates from DC to 20 GHz.