GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness.
Discrete 1200-Micron GaAs pHEMT which operates from DC to 20 GHz
Discrete 800-Micron pHEMT which operates from DC to 20 GHz.
1600µm Discrete GaAs pHEMT operating from DC to 20GHz.
Features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.