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Bipolar Transistors - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.
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Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
RoHS: RoHS Compliant Details
Brand: Toshiba
Configuration: Dual
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 15 V
Collector- Emitter Voltage VCEO Max: - 12 V
Emitter- Base Voltage VEBO: - 5 V
Mounting Style: SMD/SMT
DC Collector/Base Gain hfe Min: 300
DC Current Gain hFE Max: 1000
Pd - Power Dissipation: 200 mW
Factory Pack Quantity: 3000
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