P-channel MOSFETs with high gate to source breakdown voltage, high drain to source breakdown voltage and a low drain to source on resistance.
Features low drain source on-resistance of 3.5mΩ (typ.) at 10V and low leakage current of 10µA (max) at 30V.
Designed for use in the secondary side of AC-DC power supplies for
notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel
State-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on).
Supports high-current charging with low voltage and low RDS(on) requirements.