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2SK2613(F)

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Description: MOSFET MOSFET N-Ch 1000V 8A Rdson 1.7 Ohm
Lifecycle: Obsolete
PDF Data Sheet
 
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Manufacturer: Toshiba
Product Category: MOSFET
Brand: Toshiba
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs - Gate-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 8 A
Rds On - Drain-Source Resistance: 1.7 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 150 W
Mounting Style: Through Hole
Package / Case: TO-3P-3
Channel Mode: Enhancement
Fall Time: 30 ns
Minimum Operating Temperature: - 55 C
Rise Time: 20 ns
Factory Pack Quantity: 50
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