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Description: MOSFET MOSFET N-Ch 1000V 8A Rdson 1.7 Ohm
Lifecycle: Obsolete
PDF Data Sheet
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Manufacturer: Toshiba
Product Category: MOSFET
RoHS: RoHS Compliant Details
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 1000 V
Gate-Source Breakdown Voltage: +/- 30 V
Continuous Drain Current: 8 A
Rds On: 1.7 Ohms
Configuration: Single
Mounting Style: Through Hole
Package / Case: TO-3P
Brand: Toshiba
Fall Time: 30 ns
Power Dissipation: 150 W
Rise Time: 20 ns
Factory Pack Quantity: 50
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