Low on-resistance P-channel MOSFETs for load switching in mobile handsets and portable electronics.
High-efficiency MOSFETs that are designed for use in the secondary side of AC-DC power supplies.
Eight-pin DSOP Advance packages for the U-MOSVIII-H and U-MOSIX-H MOSFETs deliver low on-resistance
P-channel MOSFETs with high gate to source breakdown voltage, high drain to source breakdown voltage and a low drain to source on resistance.
Features low drain source on-resistance of 3.5mΩ (typ.) at 10V and low leakage current of 10µA (max) at 30V.