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Bipolar Transistors - BJT 150mA 50V
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Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
RoHS: RoHS Compliant Details
Brand: Toshiba
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 50 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 0.15 A
Gain Bandwidth Product fT: 80 MHz
Maximum Operating Temperature: + 125 C
Mounting Style: SMD/SMT
Package / Case: SMV
DC Collector/Base Gain hfe Min: 200
DC Current Gain hFE Max: 400
Minimum Operating Temperature: - 55 C
Packaging: Reel
Pd - Power Dissipation: 100 mW
Factory Pack Quantity: 3000
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