Designed for the automotive industry and combines low voltage-drop characteristics with negligible or zero recovery.
100V devices with negligible switching losses, extremely fast switching, and high junction temperature capability.
Features very low conduction losses, negligible switching losses, extremely fast switching, and low thermal resistance.
Superior physical characteristics over standard silicon, with 4 times
better dynamic characteristics and 15% less forward voltage.
Ultrahigh performance power schottky diode manufactured using a silicon carbide substrate.