6W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0GHz.
45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz.
A 10W, 50Ω input matched discrete GaN on SiC HEMT operating from 30MHz to 3GHz.
100W Peak Power, 20W Average Power, 32V, DC - 3.5GHz, GaN RF Power Transistors.
GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness.