0.4-3.6 GHz dual channel DVGA RF amplifier featuring +36.5dBm OIP3 in 0.5 dB steps through a 12-bit serial mode control interface.
Broadband Low Noise Amplifiers fabricated on TriQuint's production 0.25um GaN on SiC process.
High linearity Low Noise Amplifiers fabricated using TriQuint's TQPED process.
2 to 6GHz, 30W GaN power amplifier with a power-added efficiency of >30%, & >26dB small signal gain.
Provides 10W of saturated output power with 13dB of large signal gain and greater than 52% power-added efficiency.