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RF JFET Transistors .03-3.5GHz PAE 64.7% P3dB 5.7W @3GHz 32V
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T1G3000532-SM Datasheet T1G3000532-SM Datasheet
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Manufacturer: Qorvo
Product Category: RF JFET Transistors
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Gain: 15.7 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 32 V
Vgs - Gate-Source Breakdown Voltage: - 2.7 V
Id - Continuous Drain Current: 0.6 A
Output Power: 5.7 W
Pd - Power Dissipation: 9.1 W
Mounting Style: SMD/SMT
Package / Case: QFN-32
Packaging: Tray
Brand: TriQuint (Qorvo)
Configuration: Single
Development Kit: T1G3000532-SM-EVB
Operating Frequency: 0.03 GHz to 3.5 GHz
Rds On - Drain-Source Resistance: 50 Ohms
Part # Aliases: 1112209
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