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RF MOSFET Transistors Pwr LDMOS transistor transistor
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Manufacturer: NXP
Product Category: RF MOSFET Transistors
RoHS: RoHS Compliant Details
Id - Continuous Drain Current: 40 mA
Vds - Drain-Source Breakdown Voltage: 110 V
Rds On - Drain-Source Resistance: 700 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 11 V
Gain: 24 dB
Output Power: 1.2 kW
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-539A-5
Packaging: Tube
Brand: NXP Semiconductors
Operating Frequency: 225 MHz
Factory Pack Quantity: 60
Type: RF Power MOSFET
Vgs th - Gate-Source Threshold Voltage: 1.7 V
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Real Time Availability

On Order:

Factory Lead-Time:
15 Weeks

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Minimum: 60
Multiples: 60
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