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RF MOSFET Transistors RF DMOS 250W VHF
Lifecycle: Obsolete
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Manufacturer: NXP
Product Category: RF MOSFET Transistors
RoHS: RoHS Compliant Details
Brand: NXP Semiconductors
Transistor Type: MOSFET Power
Id - Continuous Drain Current: 18 A
Vds - Drain-Source Breakdown Voltage: 125 V
Rds On - Drain-Source Resistance: 300 mOhms
Transistor Polarity: N-Channel
Frequency: 225 MHz
Technology: Si
Vgs - Gate-Source Breakdown Voltage: +/- 20 V
Gain: 16 dB
Output Power: 250 W
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-262 A1
Packaging: Tube
Minimum Operating Temperature: - 65 C
Pd - Power Dissipation: 500 W
Product Type: RF MOSFET Power
Factory Pack Quantity: 60
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Part # Aliases: BLF278
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Pricing (USD)

171005438 197847692 147404821