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BUZ350

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Description: MOSFET
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Manufacturer: Infineon
Product Category: MOSFET
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 22 A
Rds On - Drain-Source Resistance: 120 mOhms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Mounting Style: Through Hole
Package / Case: TO-218-3
Brand: Infineon Technologies
Channel Mode: Enhancement
Fall Time: 90 ns
Minimum Operating Temperature: - 55 C
Rise Time: 70 ns
Typical Turn-Off Delay Time: 250 ns
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