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IGBT Modules 1200V 50A FL BRIDGE
Lifecycle: NRND: Not recommended for new designs.
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Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: RoHS Compliant Details
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 72 A
Gate-Emitter Leakage Current: 200 nA
Power Dissipation: 350 W
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 2A
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 500
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Real Time Availability

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Factory Lead-Time: 14 Weeks  

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    Minimum: 10
Multiples: 10
Pricing (USD)
  10: $133.99
  30: $131.17
  50: $129.31
  100: Quote

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