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IGBT Modules 1200V 200A DUAL
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Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: RoHS Compliant Details
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 290 A
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 1.4 kW
Maximum Operating Temperature: + 150 C
Package / Case: Half Bridge2
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 500
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Real Time Availability

On Order:   

Factory Lead-Time: 13 Weeks  

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    Minimum: 10
Multiples: 10
Pricing (USD)
  10: $187.16
  30: $184.54
  50: $180.39
  100: Quote

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