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RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
Lifecycle: New Product: New from this manufacturer.
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Manufacturer: Cree, Inc.
Product Category: RF JFET Transistors
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Frequency: 7.9 GHz to 9.6 GHz
Gain: 12.4 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Id - Continuous Drain Current: 12 A
Output Power: 131 W
Maximum Drain Gate Voltage: -
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: -
Mounting Style: Screw
Package / Case: 440210
Packaging: Tray
Application: -
Brand: Cree, Inc.
Ciss - Input Capacitance: -
Class: -
Configuration: Single
Development Kit: CGHV96100F2-TB
Forward Transconductance - Min: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: - 40 C
Noise Figure: -
Operating Temperature Range: -
P1dB: -
Rds On - Drain-Source Resistance: -
Vgs th - Gate-Source Threshold Voltage: - 3 V
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Factory Lead-Time: 2 Weeks  

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