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Mouser Part #:
941-CGHV35150F
Manufacturer Part #:

CGHV35150F

Manufacturer:

Description: Transistors RF JFET 2.9-3.5GHz 150W GaN Gain@3.1Ghz 13.3dB
Lifecycle: New Product: New from this manufacturer.
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Manufacturer: Cree, Inc.
Product Category: Transistors RF JFET
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Frequency: 3.1 GHz to 3.5 GHz
Gain: 13.3 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Id - Continuous Drain Current: 12 A
Output Power: 170 W
Maximum Drain Gate Voltage: -
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: -
Mounting Style: Screw
Package / Case: 440193
Packaging: Tube
Application: -
Brand: Cree, Inc.
Ciss - Input Capacitance: -
Class: -
Configuration: Single
Development Kit: CGHV35150-TB
Forward Transconductance - Min: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: - 40 C
Noise Figure: -
Operating Temperature Range: -
P1dB: -
Rds On - Drain-Source Resistance: -
Vgs th - Gate-Source Threshold Voltage: - 3 V
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25 Can Ship Immediately

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Factory Lead-Time: 3 Weeks  


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Pricing (USD)
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