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Mouser Part #:
941-CGHV14250F
Manufacturer Part #:

CGHV14250F

Manufacturer:

Description: Transistors RF JFET 1.2-1.4GHz 250W GaN Gain 18.2dB
Lifecycle: New Product: New from this manufacturer.
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Manufacturer: Cree, Inc.
Product Category: Transistors RF JFET
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Frequency: 1.2 GHz to 1.4 GHz
Gain: 18.6 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Id - Continuous Drain Current: 18 A
Output Power: 330 W
Maximum Drain Gate Voltage: -
Maximum Operating Temperature: + 130 C
Pd - Power Dissipation: -
Mounting Style: Screw
Package / Case: 440162
Packaging: Tube
Brand: Cree, Inc.
Ciss - Input Capacitance: -
Configuration: Single
Development Kit: CGHV14250F-TB
Forward Transconductance - Min: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: - 40 C
Noise Figure: -
Operating Temperature Range: -
P1dB: -
Rds On - Drain-Source Resistance: -
Vgs th - Gate-Source Threshold Voltage: - 3 V
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Real Time Availability
Stock:
25 Can Ship Immediately

On Order: 0  

Factory Lead-Time: 3 Weeks  


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Pricing (USD)
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