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RF JFET Transistors DC-6GHz 60W GaN Gain@ 4GHz 13dB
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Manufacturer: Cree, Inc.
Product Category: RF JFET Transistors
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Gain: 13 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Id - Continuous Drain Current: 6 A
Output Power: 60 W
Maximum Drain Gate Voltage: -
Maximum Operating Temperature: -
Pd - Power Dissipation: -
Mounting Style: SMD/SMT
Package / Case: Bare Die
Packaging: Waffle
Application: -
Brand: Cree, Inc.
Class: -
Development Kit: -
Forward Transconductance - Min: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: -
NF - Noise Figure: -
Operating Frequency: 4 GHz to 6 GHz
Operating Temperature Range: -
P1dB - Compression Point: -
Rds On - Drain-Source Resistance: 0.25 Ohms
Vgs th - Gate-Source Threshold Voltage: - 3 V
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40 Can Ship Immediately

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Factory Lead-Time:
4 Weeks

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Minimum: 10
Multiples: 10
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