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Description: Transistors RF JFET DC-6GHz 30W GaN Gain@ 4GHz 15dB
Lifecycle: New Product: New from this manufacturer.
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Manufacturer: Cree, Inc.
Product Category: Transistors RF JFET
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Frequency: 4 GHz to 6 GHz
Gain: 15 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Id - Continuous Drain Current: 3 A
Output Power: 30 W
Maximum Drain Gate Voltage: -
Maximum Operating Temperature: -
Pd - Power Dissipation: -
Mounting Style: SMD/SMT
Package / Case: Die
Packaging: Waffle
Brand: Cree, Inc.
Ciss - Input Capacitance: 8.2 pF
Configuration: Single
Development Kit: -
Forward Transconductance - Min: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: -
Noise Figure: -
Operating Temperature Range: -
P1dB: -
Rds On - Drain-Source Resistance: 0.5 Ohms
Vgs th - Gate-Source Threshold Voltage: - 3 V
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Real Time Availability
40 Can Ship Immediately

On Order: 0  

Factory Lead-Time: 3 Weeks  

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    Minimum: 10
Multiples: 10
Pricing (USD)
  10: $83.41

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