|    Change Country Change Location USD
 
United States United States

Please confirm your currency selection:

US Dollars
Mouser Part #:
941-CGH40180PP
Manufacturer Part #:

CGH40180PP

Manufacturer:

Description:
RF JFET Transistors DC-2.5GHz 28V 180W Gain 19dB GaN HEMT
Lifecycle:
New Product: New from this manufacturer.
Images are for reference only
See Product Specifications
Share |
Manufacturer: Cree, Inc.
Product Category: RF JFET Transistors
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Gain: 19 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Id - Continuous Drain Current: 24 A
Output Power: 220 W
Maximum Drain Gate Voltage: -
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: -
Mounting Style: Screw
Package / Case: 440199
Packaging: Tube
Application: -
Brand: Cree, Inc.
Class: -
Configuration: Dual
Development Kit: CGH40180PP-TB
Forward Transconductance - Min: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: - 40 C
NF - Noise Figure: -
Operating Frequency: 1 GHz to 2.5 GHz
Operating Temperature Range: -
P1dB - Compression Point: -
Rds On - Drain-Source Resistance: -
Vgs th - Gate-Source Threshold Voltage: - 3 V
Log In to create a note about this product or see notes that you previously created on this product.
ImageMfr. Part #DescriptionStock 
P0082 Programmable Logic IC Development Tools 321
LAN9514I-JZX USB Interface IC 2,091
CGH40025F RF JFET Transistors 237
CGH40120F RF JFET Transistors 68
CGH40035F RF JFET Transistors 116
OPA140AIDBVT Operational Amplifiers - Op Amps 2,183
IRLH5036TRPBF MOSFET 3,383
IRFS3006-7PPBF MOSFET 354
MC7815ACTG Linear Voltage Regulators 1,750
Real Time Availability
Stock:
106 Can Ship Immediately

On Order:
0

Factory Lead-Time:
12 Weeks


Enter Quantity:

   
Minimum: 1
Multiples: 1
Pricing (USD)
1:
$449.84

To add to a project, please Log In.

142657343 164788757 147914401 187748749 197847692