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Mouser Part #:
941-CGH40035F
Manufacturer Part #:

CGH40035F

Manufacturer:

Description: Transistors RF JFET DC-6GHz 28V 35W Gain 14dB GaN HEMT
Lifecycle: New Product: New from this manufacturer.
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Manufacturer: Cree, Inc.
Product Category: Transistors RF JFET
RoHS: RoHS Compliant Details
Transistor Type: HEMT
Technology: GaN SiC
Frequency: 2 GHz to 4 GHz
Gain: 15 dB
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to + 2 V
Id - Continuous Drain Current: 4.5 A
Output Power: 45 W
Maximum Drain Gate Voltage: -
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: -
Mounting Style: Screw
Package / Case: 440193
Packaging: Tube
Application: -
Brand: Cree, Inc.
Ciss - Input Capacitance: 14.7 pF
Class: -
Configuration: Single
Development Kit: CGH40035F-TB
Forward Transconductance - Min: -
Gate-Source Cutoff Voltage: -
Minimum Operating Temperature: - 40 C
Noise Figure: -
Operating Temperature Range: -
P1dB: -
Rds On - Drain-Source Resistance: -
Vgs th - Gate-Source Threshold Voltage: - 3 V
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Real Time Availability
Stock:
24 Can Ship Immediately

On Order: 0  

Factory Lead-Time: 2 Weeks  


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    Minimum: 1
Multiples: 1
Pricing (USD)
  1: $204.96

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