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ON Semiconductor Single N- & P-Channel Power MOSFETs

ON Semiconductor Single N- & P-Channel Power MOSFETs

ON Semiconductor Single N- & P-Channel Power MOSFETs offer a small footprint for compact designs, low RDS(on) to minimize conduction losses, and low QG and capacitance to minimize driver losses. ON Semiconductor Single N- & P-Channel Power MOSFETs are Pb−free and are suitable for automotive and other applications requiring AEC−Q101 qualified site and change controls.

Features

  • Small footprint
  • Low RDS(on)
  • Low QG
  • Low capacitance
  • Pb−free devices

Part Number Datasheet VDSS RDS(on) ID Transistor Polarity Package Footprint Size
NVMFS4841NT1G
30V 7mΩ 89A N−Channel SO-8FL 5 x 6mm
NVTFS4823NTAG 30V 10.5mΩ 30A N−Channel WDFN-8 3.3 x 3.3mm
NVTFS5116PLTAG −60V 52mΩ −14A P−Channel WDFN-8 3.3 x 3.3mm
NVTFS5811NLTAG 40V 6.7mΩ 40A N−Channel WDFN-8 3.3 x 3.3mm
NVTFS5826NLTAG 60V 24mΩ 20A N−Channel WDFN-8 3.3 x 3.3mm
NVTFS5820NLTAG 60V 11.5mΩ 29A N−Channel WDFN-8 3.3 x 3.3mm

5 x 6mm Footprint Dimensions

5 x 6mm Footprint Dimensions

3.3 x 3.3mm Footprint Dimensions


3.3 x 3.3mm Footprint Dimensions
  • ON Semiconductor
  • Semiconductors|Discrete Semiconductors|Transistors (FETs, Bipolars & IGBTs)